Apparatus and method for pipelined memory operations

Electrical computers and digital processing systems: memory – Storage accessing and control – Access timing

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C711S104000, C711S005000, C365S233100, C365S189040, C365S189011, C365S189030

Reexamination Certificate

active

07353357

ABSTRACT:
A semiconductor memory device has a memory core that includes at least eight banks of dynamic random access storage cells and an internal data bus coupled to the memory core. The internal data bus receives a plurality of data bits from a selected bank of the memory core. The semiconductor memory device further comprises a first interface to receive a read command from external to the semiconductor memory device and a second interface to output first and second subsets of the plurality of data bits. The first subset is output during a first phase of an external clock signal and the second subset is output during a second phase of the external clock signal. The first phase includes a first edge transition and the second phase includes a second edge transition. The second edge transition is an opposite edge transition with respect to the first edge transition.

REFERENCES:
patent: 3969706 (1976-07-01), Proebsting et al.
patent: 4322635 (1982-03-01), Redwine
patent: 4330852 (1982-05-01), Redwine et al.
patent: 4434474 (1984-02-01), Best et al.
patent: 4449207 (1984-05-01), Kung et al.
patent: 4967398 (1990-10-01), Jamoua et al.
patent: 5142276 (1992-08-01), Moffat
patent: 5313437 (1994-05-01), Toda et al.
patent: 5323358 (1994-06-01), Toda et al.
patent: 5341341 (1994-08-01), Fukuzo
patent: 5367494 (1994-11-01), Shebanow et al.
patent: 5390149 (1995-02-01), Vogley et al.
patent: 5430676 (1995-07-01), Ware et al.
patent: 5434817 (1995-07-01), Ware et al.
patent: 5471607 (1995-11-01), Garde
patent: 5475829 (1995-12-01), Thome
patent: 5511024 (1996-04-01), Ware et al.
patent: 5539696 (1996-07-01), Patel
patent: 5568428 (1996-10-01), Toda
patent: 5594704 (1997-01-01), Konishi et al.
patent: 5604705 (1997-02-01), Ackland et al.
patent: 5644537 (1997-07-01), Toda
patent: 5655113 (1997-08-01), Leung et al.
patent: 5673226 (1997-09-01), Yumitori et al.
patent: 5748560 (1998-05-01), Sawada
patent: 5774409 (1998-06-01), Yamazaki et al.
patent: 5778419 (1998-07-01), Hansen et al.
patent: 5796660 (1998-08-01), Toda
patent: 5805873 (1998-09-01), Roy
patent: 5870350 (1999-02-01), Bertin et al.
patent: 5923611 (1999-07-01), Ryan
patent: 5956274 (1999-09-01), Elliott et al.
patent: 5970019 (1999-10-01), Suzuki et al.
patent: 5978296 (1999-11-01), Zibert
patent: 5999197 (1999-12-01), Satoh et al.
patent: 6006290 (1999-12-01), Suh
patent: 6018478 (2000-01-01), Higuchi
patent: 6035369 (2000-03-01), Ware et al.
patent: 6065092 (2000-05-01), Roy
patent: 6088280 (2000-07-01), Vogley et al.
patent: 6088291 (2000-07-01), Fujioka et al.
patent: 6170036 (2001-01-01), Konishi et al.
patent: 6202119 (2001-03-01), Manning
patent: 6226723 (2001-05-01), Gustavson et al.
patent: 6266737 (2001-07-01), Ware et al.
patent: 6321316 (2001-11-01), Manning
patent: 6378020 (2002-04-01), Farmwald et al.
patent: 6470405 (2002-10-01), Barth et al.
patent: 6493789 (2002-12-01), Ware et al.
patent: 6496897 (2002-12-01), Ware et al.
patent: 6553449 (2003-04-01), Dodd et al.
patent: 6681288 (2004-01-01), Griffin et al.
patent: 6684285 (2004-01-01), Farmwald et al.
patent: 6728819 (2004-04-01), Farmwald et al.
patent: 6931467 (2005-08-01), Barth et al.
patent: 7197611 (2007-03-01), Barth et al.
patent: 2002/0018393 (2002-02-01), Kyung
patent: 487819 (1992-06-01), None
patent: 0 515 165 (1992-11-01), None
patent: 0 617 364 (1994-09-01), None
patent: 0759621 (1997-02-01), None
patent: 02003068072 (2003-03-01), None
patent: WO 79-00914 (1979-11-01), None
patent: WO94 12935 (1994-06-01), None
patent: WO94 24628 (1994-10-01), None
patent: WO 02 05283 (2002-01-01), None
“Trends in High-Speed DRAM Architecture”, Kumanoya et al., IEICE Trans. Electron. vol. E 79-C, No. 4, Apr. 1996, pp. 472-481.
MT48LC2M8xxS 2 Meg.times.8 SDRAM Micron Technology, Inc., Rev. Apr. 1996.
“Synchronous Dram” Micron Technology, Inc., Rev. Apr. 1996.
Future SDRAM-Clock Issues JEDEC Meeting Jan. 31, 1996.
“M5M4V16807ATP-10, 12-, -15 Target Spec. (Rev. 0.3)”, Mitsubishi Electri,May 7, 1993, pp. 1-36.
“400 Mb/s/pin SLDRAM” Data Sheet, SLDRAM, Inc., Jul. 1998.
Steven A. Przybyliski, “New DRAM Technologies, A Comprehensive Analysis of the New Architectures”, pp. iii-iv, 119-121, 138-158, 177-203 (MicroDesign Resource 1994).
TMS626402, “2097 152-Word by Bank Synchronous Dynamic Random-Access Memory”, Texas.
Instruments, 1994, pp. 5-3-5-23.
“Architectural Overview”, Rambus, Inc., 1992, pp. 1-24.
“MT4LC4M4E9 (S) 4 MEG X DRAM”, Micron Semiconductor, Inc., 1994, pp. 1-183-1-196.
Rambus Inc., “16/18Mbit (2M×8/9) & 64/72 Mbit (8M×8/9) Concurrent RDRAM - Advance Information,” Rambus Inc. Data Sheet, Jul. 1996, 61 pages.
Rambus Inc., “8/9-Mbit (1M×8/9) & 16/18Mbit (2M×8/9) RDRAM - Preliminary Information,” Rambus Inc. Data Sheet, Mar. 1, 1996, 30 pages.
“Draft Standard for a High-Speed Memory Interface (SyncLink)”, Draft 0.99 IEEE P1596.7-199X, pp. 1-66 (1996).
Gillingham, Peter, “SLDRAM Architechtural and Functional Overview,” SLDRAM Consortium, SLDRAM Inc., pp. 1-14 (Aug. 29, 1997).
MoSys, Inc., “MG802C256 Ultra Low Latency, High Performance 256K×32 SGRAM - Preliminary Information,” Aug. 29, 1997, 1 page.
MoSys, Inc., “MD904 to MD920, 1/2 to 2 1/2 MByte Multibank DRAM (MDRAM) 128K×32 to 656×32 Preliminary Information,” Feb. 21, 1997.
Yamashita et al., “A 3.84 GIPS Integrated Memory Array Processor LSI with 64 Processing Elements and a 2Mb SRAM,” IEEE Journal of Solid-State Circuits, vol. 29, No. 11, pp. 1336-1343, Nov. 1994.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus and method for pipelined memory operations does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus and method for pipelined memory operations, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for pipelined memory operations will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2786310

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.