Apparatus and method for optimally scanning a two-dimensional su

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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358495, 156627, 156645, H01L 21306

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052829219

ABSTRACT:
A method for optimally scanning, for example, a surface of one or more silicon-on-insulator (SOI) semiconductor wafers 10 consists of a spiral type scan technique. The spiral type scan can maintain a path pattern 30 that encompasses the surface diameter of a single SOI wafer 10. The spiral type scan can also maintain a path pattern 30 that encompasses the surface diameters of several SOI wafers 10. The path pattern 30 of the spiral type scan does not include any abrupt redirectional changes. Thus, the machinery controlling the path pattern 30 of the spiral type scan does not undergo unnecessary mechanical stresses. Furthermore, when using the spiral type scan in a chemical etching process of one or more SOI wafers 10 and the etch rate of a chemical etching probe 18 is modulated, the mechanical stresses are further reduced and there are minimal depreciative etching problems.

REFERENCES:
patent: 2912497 (1959-11-01), Parrott
patent: 2967907 (1961-01-01), Stamps
patent: 3806643 (1974-04-01), Russell
patent: 4423137 (1983-12-01), Rester
patent: 4509162 (1985-04-01), Rester
IBM Technical Disclosure Bulletin, vol. 18 #12, May 1976, p. 3914.

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