Apparatus and method for obtaining symmetrical junctions...

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

Reexamination Certificate

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C204S298040, C204S298150, C427S131000

Reexamination Certificate

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06878240

ABSTRACT:
A sputtering system is provided with a substrate and a sputtering material layer that are located in a sputtering chamber. The sputtering material layer has a sputtering surface where atoms of the material are sputtered and the substrate has a forming surface with a site where atoms of the sputtered material are to be formed. The sputtering material layer has a sputtering center which is located at a center of the atoms to be sputtered and the aforementioned site has a periphery with a forming center at a center of the periphery. The sputtering center is offset from the forming center so that shadowing at outer extremities of photoresist masks near the periphery of the substrate is minimized.

REFERENCES:
patent: 4234797 (1980-11-01), Ryding
patent: 4628209 (1986-12-01), Wittkower
patent: 4733091 (1988-03-01), Robinson et al.
patent: 4781520 (1988-11-01), Balter
patent: 4831270 (1989-05-01), Weisenberger
patent: 4891526 (1990-01-01), Reeds
patent: 4980562 (1990-12-01), Berrian et al.
patent: 5308461 (1994-05-01), Ahonen
patent: 5389793 (1995-02-01), Aitken et al.
patent: 6025602 (2000-02-01), Rose et al.
patent: 6086727 (2000-07-01), Pinarbasi
patent: 6226158 (2001-05-01), Pinarbasi
patent: 6267851 (2001-07-01), Hosokawa

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