Optics: measuring and testing – Crystal or gem examination
Patent
1999-08-24
2000-11-07
Rosenberger, Richard A.
Optics: measuring and testing
Crystal or gem examination
356 32, G01N 2100
Patent
active
06144443&
ABSTRACT:
An apparatus for measuring crystal strain in a microscopic region within a semiconductor crystal. The apparatus comprises: a He--Ne laser 1 for irradiating a laser light perpendicularly to the recording surface of a negative film 2 on which a transmission electron microscope image of a semiconductor crystal as a sample is recorded; a translucent screen 3 on which a diffraction image is projected, said diffraction image being produced by transmitting the laser light through said transmission electron microscope image recorded on said negative film 2; a CCD camera 4 for taking said diffraction image projected; and a computer for measurement and control 5 for scanning irradiation positions of said laser light, for taking in picked up image data from said CCD camera 4 in synchronization with said scanning, for measuring positions or intensities of diffraction spots based on said picked up image data, and for mapping a relation of diffraction spot positions or diffraction spot intensities for each irradiation position.
REFERENCES:
patent: 5011278 (1991-04-01), Farrell
patent: 5453617 (1995-09-01), Tsuneta et al.
Snoeck, E. et al, Quantitative analysis of strain field in thin films from HRTEM micrographs, Thin Solid Films 319 (1998) 157-162.
Ide, T. et al., Nanometer-Scale Imaging of Lattice Deformation with Transmission Electron Micrograph, JP J. Appl. Phys. vol. 37 (1998) pp. L1546-L1548.
NEC Corporation
Rosenberger Richard A.
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