Semiconductor device manufacturing: process – Including control responsive to sensed condition
Reexamination Certificate
2006-11-28
2006-11-28
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Including control responsive to sensed condition
C438S007000, C438S010000, C438S017000, C356S237500
Reexamination Certificate
active
07141440
ABSTRACT:
A property of a layer is measured by: (1) focusing a heating beam on a region (also called “heated region”) of a conductive layer (2) modulating the power of the heating beam at a predetermined frequency that is selected to be sufficiently low to ensure that at any time the temperature of an optically absorbing layer is approximately equal to (e.g., within 90% of) a temperature of the optically absorbing layer when heated by an unmodulated beam, and (3) measuring the power of another beam that is (a) reflected by the heated region, and (b) modulated in phase with modulation of the heating beam. The measurement in act (3) can be used directly as a measure of the resistance (per unit area) of a conductive pad formed by patterning the conductive layer. Change in measurement across regions indicates a corresponding change in resistance of the layer.
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A. Salnick e
Borden Peter G.
Li Ji Ping
Applied Materials Inc.
Picardat Kevin M.
Suryadevara Omkar
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