Radiant energy – Irradiation of objects or material – Irradiation of semiconductor devices
Patent
1976-12-27
1978-02-14
Lieberman, Eli
Radiant energy
Irradiation of objects or material
Irradiation of semiconductor devices
148 15, H01J 3730, H01L 2172, H01L 21265
Patent
active
040741397
ABSTRACT:
A method and apparatus for implanting dopant material into a substrate of semiconductive material in a preselected pattern without utilizing a mask comprises the use of a source template which is formed of the desired dopant material in the configuration of the pattern to be implanted. Ions of the dopant material are sputtered from the template by bombardment with an ionized gas, and these dopant ions are then filtered from unwanted ion species and accelerated into the substrate while remaining in the original template pattern.
REFERENCES:
patent: 3500042 (1970-03-01), Castaing et al.
patent: 3866042 (1975-02-01), Vastel
Christoffersen H.
Lieberman Eli
Magee T. H.
RCA Corporation
Roberts Charles F.
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