Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1997-10-23
1999-08-17
Hiteshew, Felisa
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 32, 117201, 117917, C30B 1522
Patent
active
059388366
ABSTRACT:
This invention provides an apparatus and a method for manufacturing semiconductor single crystals, which enable a steady process of pulling up high-quality single silicon crystals to be easily performed during the growing of silicon single crystals by the CZ method aided by applying a Cusp magnetic field. Three facing homopolar magnets (hereinafter referred to as magnet) 1, 2, and 3 arc disposed outside the single-crystal pulling up chamber. The magnet 3 is located at the same height as the free surface of the melt 6 stored in a quartz crucible as the free surface of the melt 6 stored in a quartz crucible 5. Furthermore, the strength of the magnets 3 is set to be weaker than that of the magnets 1 and 2. The flux lines of the magnets 3 substantially pass through the quartz crucible 5 in the horizontal direction. However, the flux lines of the magnet 3 do not reach the silicon single crystal 7 being pulled up. The flux lines perpendicular to the free surface of the melt 6 and the strength of the magnetic field near the growth boundary of the crystal are reduces. Thus, the amount of oxygen coming from the quartz crucible 5 and convection near the free surface of the melt 6, starting from the quartz crucible 5 toward the silicon single crystal, can be minimized.
REFERENCES:
patent: 4522790 (1985-06-01), Dantzig et al.
patent: 4592895 (1986-06-01), Matsutani et al.
patent: 4818500 (1989-04-01), Boden et al.
patent: 4830703 (1989-05-01), Matsutani
patent: 5009865 (1991-04-01), Boden et al.
Inagaki Hiroshi
Tomioka Junsuke
Yamamoto Katsura
Hiteshew Felisa
Komatsu Electronic Metals Co. Ltd.
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