Apparatus and method for manufacturing semiconductor...

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...

Reexamination Certificate

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Details

C438S022000, C438S028000, C438S046000, C438S796000, C438S799000, C257S080000, C257S081000, C257S082000, C257S103000

Reexamination Certificate

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06905983

ABSTRACT:
An apparatus of manufacturing a semiconductor device is disclosed which comprises at least one heat/light source opposing at least one major surface of a to-be-processed substrate, the heat/light source emitting light rays with a heating function onto the major surface of the to-be-processed substrate, and at least one light intensity adjusting member interposed between the heat/light source and the to-be-processed substrate, the light intensity adjusting member being made of a material which can pass therethrough the light rays, the light intensity adjusting member adjusting, to a substantially predetermined value, an intensity of the light rays at the major surface of the to-be-processed substrate.

REFERENCES:
patent: 6586874 (2003-07-01), Komoto et al.
patent: 361131426 (1986-06-01), None
patent: 403006018 (1991-01-01), None
patent: 3-276625 (1991-12-01), None
patent: 2515883 (1996-04-01), None
patent: 2001-319887 (2001-11-01), None
patent: 2004-31867 (2004-01-01), None
Copy of Notification of Reasons for Rejection Issued Mar. 15, 2005 by the Japan Patent Office in counterpart application JP 2002-352745, and English-language translation thereof.

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