Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1986-05-15
1987-04-28
Demers, Arthur P.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
204298, C23C 1400
Patent
active
046612289
ABSTRACT:
An apparatus for planarizing an aluminum layer on a semiconductor wafer includes two deposition sources. The first source applies a refractory metal silicide layer to form a barrier to oxygen. The wafer is moved to a second deposition source which is an aluminum sputter device including a heater for the wafer, R.F. bias on the wafer and a magnetic mirror behind the wafer to move the plasma away from the wafer.
REFERENCES:
patent: 4313815 (1985-02-01), Graves et al.
patent: 4385979 (1983-05-01), Pierce et al.
patent: 4414086 (1983-11-01), Lamont
patent: 4500409 (1985-02-01), Boys et al.
patent: 4522845 (1985-06-01), Powell et al.
patent: 4526665 (1985-07-01), Tanielian et al.
patent: 4547279 (1985-10-01), Kiyota et al.
patent: 4569746 (1986-02-01), Hutchinson
Transactions of Electron Devices, vol. ED-27, No. 8, 8/80, pp. 1409 et seq., "Refractory Silicides of Titanium and Tantalum for Low-Resistivity . . . ", Shyam P. Murarka et al.
Mat.Res.Soc.Symp. Proc., vol. 25(1984) "Barrier Properties of TaSi.sub.2 In Contact with Al-Metallization", F. Neppl et al., (Siemens AG,Central R&D, Microelectronics-Munich.
Cole Stanley Z.
Demers Arthur P.
Varian Associates Inc.
Warsh Kenneth L.
LandOfFree
Apparatus and method for manufacturing planarized aluminum films does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for manufacturing planarized aluminum films, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for manufacturing planarized aluminum films will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-475757