Apparatus and method for manufacturing a semiconductor device ha

Details Apparatus and method for manufacturing a semiconductor device ha Apparatus and method for manufacturing a semiconductor device ha

1998-04-20

2000-06-13

Bueker, Richard

Coating apparatus

Gas or vapor deposition

Multizone chamber

118715, 118730, C23C 1600

Patent

active

060744863

ABSTRACT:
An apparatus and method for forming a HSG silicon layer on a capacitor lower electrode of a semiconductor memory device. The apparatus includes a processing chamber having a plurality of source gas supply nozzles, the lengths of the nozzles being different from one another so as to uniformly supply a source gas. A loadlock chamber is placed under the processing chamber. A boat loaded with wafers is moved from the loadlock chamber to the processing chamber, with the boat being rotated while the source gas is supplied. The processing chamber and loadlock chambers are connected to a vacuum system having two vacuum pumps for maintaining a vacuum in the chambers. A third vacuum pump, connected to the processing chamber, is operated when the vacuum in the processing chamber reaches a predetermined value.

REFERENCES:
patent: 4962726 (1990-10-01), Matsushita
patent: 5433785 (1995-07-01), Saito
patent: 5443648 (1995-08-01), Ohkase
patent: 5520743 (1996-05-01), Takahashi
patent: 5925188 (1999-07-01), Oh
Extended Abstracts of the 1992 International Conference on Solid State Device; H. Watanabe et al. "Hemispherical Grained Silicon (HSG-SI) Formation on In-Situ Phosphorous Doped Amorphous-Si Using the Seeding Method": pp. 422-424.

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