Apparatus and method for low power sensing in a multi-port...

Static information storage and retrieval – Read/write circuit – Particular read circuit

Reexamination Certificate

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C365S190000, C365S156000, C365S208000, C365S204000, C365S203000, C365S230050, C365S227000

Reexamination Certificate

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07859921

ABSTRACT:
A method for sensing the contents of a memory cell within a static random access memory (SRAM) includes holding a bit line associated with the memory cell at a zero voltage potential when the memory cell is not being accessed; energizing the bit line to a first voltage potential different than the zero voltage potential during an access of the memory cell; and sensing the memory cell contents when the associated bit line has reached the first voltage potential.

REFERENCES:
patent: 4656361 (1987-04-01), McIntyre
patent: 6262912 (2001-07-01), Sywyk et al.
patent: 7161868 (2007-01-01), Morishima
patent: 7272061 (2007-09-01), Saleh
patent: 2002/0172076 (2002-11-01), Marotta et al.
patent: 2004/0243758 (2004-12-01), Notani
patent: 2007/0263435 (2007-11-01), Nii

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