Optics: measuring and testing – Inspection of flaws or impurities – Surface condition
Reexamination Certificate
2005-09-27
2005-09-27
Rosenberger, Richard A. (Department: 2877)
Optics: measuring and testing
Inspection of flaws or impurities
Surface condition
C356S394000
Reexamination Certificate
active
06950183
ABSTRACT:
A method for inspecting masks used to project patterns in photolithographic imaging comprises initially providing a photolithographic mask having a pattern field thereon, where in normal production use the pattern is transferred by a reduction projector as a demagnified pattern on a production substrate, and providing a movable field-defining aperture adjacent the mask, the aperture having a field area less than, and capable of defining a pattern subfield comprising only a portion of the entire photolithographic mask pattern field. The method then includes aligning the field-defining aperture with a pattern subfield comprising only a portion of the entire photolithographic mask pattern field. Using an energy source, the method includes projecting the pattern subfield onto a test substrate and exposing onto the test substrate the pattern subfield at a size between that normally exposed on a production substrate and the actual size of the pattern subfield on the photolithographic mask. Subsequently, the method includes inspecting the exposed pattern subfield on the test substrate for defects in the photolithographic mask.
REFERENCES:
patent: 4555798 (1985-11-01), Broadbent, Jr. et al.
patent: 4641353 (1987-02-01), Kobayashi
patent: 5162867 (1992-11-01), Kohno
patent: 5481624 (1996-01-01), Kamon
patent: 6023328 (2000-02-01), Pierrat
patent: 6268093 (2001-07-01), Kenan et al.
patent: 6800421 (2004-10-01), Hasegawa et al.
patent: 7175205 (1995-07-01), None
patent: 9211840 (1997-08-01), None
Brunner Timothy A.
Hibbs Michael S.
Progler Christopher J.
C. Li Todd M.
DeLio & Peterson LLC
International Business Machines - Corporation
Peterson Peter W.
Rosenberger Richard A.
LandOfFree
Apparatus and method for inspection of photolithographic mask does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for inspection of photolithographic mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for inspection of photolithographic mask will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3386904