Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2007-10-26
2009-08-18
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185090
Reexamination Certificate
active
07577035
ABSTRACT:
An apparatus for improving write/read endurance of non-volatile memory includes a non-volatile memory area including a plurality of non-volatile memory cells to store data, and an endurance improving circuit detecting a degradation characteristic of the non-volatile memory cells upon the integrated circuit card being reset and initialized. The apparatus increases at least one of a write voltage used to write first data to the non-volatile memory cells and a read voltage used to read second data from the non-volatile memory cells based on a detection result. A method for improving write/read endurance of non-volatile memory includes monitoring the characteristic of non-volatile memory cells upon an integrated circuit card being reset and initialized, and increasing at least one among a write voltage and a read voltage which are applied to the non-volatile memory cells based on a monitoring result.
REFERENCES:
patent: 4718041 (1988-01-01), Baglee et al.
patent: 5335198 (1994-08-01), Van Buskirk et al.
patent: 5642309 (1997-06-01), Kim et al.
patent: 6269025 (2001-07-01), Hollmer et al.
F. Chau & Associates LLC
Nguyen Tan T.
Samsung Electronics Co,. Ltd.
LandOfFree
Apparatus and method for improving write/read endurance of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for improving write/read endurance of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for improving write/read endurance of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4130899