Apparatus and method for improving write/read endurance of...

Details Apparatus and method for improving write/read endurance of... Apparatus and method for improving write/read endurance of...

2007-12-04

2007-12-04

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185090

Reexamination Certificate

active

11447544

ABSTRACT:
An apparatus for improving write/read endurance of non-volatile memory includes a non-volatile memory area including a plurality of non-volatile memory cells to store data, and an endurance improving circuit detecting a degradation characteristic of the non-volatile memory cells upon the integrated circuit card being reset and initialized. The apparatus increases at least one of a write voltage used to write first data to the non-volatile memory cells and a read voltage used to read second data from the non-volatile memory cells based on a detection result. A method for improving write/read endurance of non-volatile memory includes monitoring the characteristic of non-volatile memory cells upon an integrated circuit card being reset and initialized, and increasing at least one among a write voltage and a read voltage which are applied to the non-volatile memory cells based on a monitoring result.

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patent: 6052306 (2000-04-01), Sedlak et al.
patent: 00057785 (2000-02-01), None
patent: 00348491 (2000-12-01), None
patent: 02133887 (2002-05-01), None
English Abstract for Publication No.: 2000-057785, Feb. 2000.
English Abstract for Publication No.: 2000-348491, Dec. 2000.
English Abstract for Publication No.: 2002-133887, May 2002.
Notice to Submit Response to an Office Action.
English Translation of the Office Action.

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