Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-08-01
2000-02-29
Warden, Jill
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438909, 438935, 216 67, 4272481, H01L 21302
Patent
active
060309024
ABSTRACT:
A novel batch processing system used, for example, in plasma etching and chemical vapor deposition, wherein the pressure in the reactor is cycled through a varying pressure to increase the transfer of the reactant materials to the center of the wafer. One version of the invention provides a method that includes the steps of (i) feeding reactant gases into a reaction vessel, (ii) exhausting unused reactive gases and/or reaction by-products from the reaction vessel, and (iii) cycling the pressure in the reaction vessel between a higher pressure P.sub.high and a lower pressure P.sub.low. Another version of the invention provides an apparatus that comprises (i) a reaction vessel, (ii) a feed means for feeding reactive gases into the reaction vessel, (iii) an exhaust means for exhausting unused reactive gases and/or reaction by-products from the reaction vessel, and (d) a pressure control means for cycling the pressure in the reaction vessel between a higher pressure P.sub.high and a lower pressure P.sub.low. In one aspect of the invention, the higher pressure P.sub.high is maintained for a predetermined period of time T.sub.high and the lower pressure P.sub.low is maintained for a predetermined period of time T.sub.low.
REFERENCES:
patent: 3765926 (1973-10-01), Ramachandran
patent: 4563367 (1986-01-01), Sherman
patent: 4636401 (1987-01-01), Yamazaki et al.
patent: 4728869 (1988-03-01), Johnson et al.
patent: 4935661 (1990-06-01), Heinecke et al.
patent: 5013400 (1991-05-01), Kurasaki et al.
patent: 5147687 (1992-09-01), Garg et al.
patent: 5167716 (1992-12-01), Boitnott et al.
patent: 5413663 (1995-05-01), Shimizu et al.
patent: 5460689 (1995-10-01), Raaijmakers et al.
patent: 5474650 (1995-12-01), Kumihashi et al.
patent: 5482748 (1996-01-01), Soderberg et al.
patent: 5514453 (1996-05-01), Goujard et al.
patent: 5637190 (1997-06-01), Liao
patent: 5693179 (1997-12-01), Blackburn et al.
Alanko Anita
Warden Jill
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