Apparatus and method for immersion lithography

Details Apparatus and method for immersion lithography Apparatus and method for immersion lithography

2006-08-15

2006-08-15

Nguyen, Kiet T. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

Reexamination Certificate

active

07091502

ABSTRACT:
An immersion lithography system for semiconductor manufacturing provides a lens assembly that moves relative to a wafer surface and includes a nozzle and drain assembly that is coupled to, and moves along, the lens assembly. The nozzle and drain assemblies may be disposed circumferentially opposite each other about the lens or an annular ring may be provided that surrounds the lens and includes a plurality of selectable alternating nozzles and drains. The nozzle and drain assemblies may rotatably surround the lens. At least a portion of the wafer being patterned is immersed in a liquid provided by the nozzle assembly and a flow direction is controlled by manipulating the nozzle and drain assemblies. Flow direction may be advantageously directed outwardly to reduce particulate contamination.

REFERENCES:
patent: 3648587 (1972-03-01), Stevens
patent: 4480910 (1984-11-01), Takanashi et al.
patent: 2005/0175940 (2005-08-01), Dierichs
patent: 2004-320017 (2004-11-01), None

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