Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating
Patent
1996-02-02
1998-08-04
Pascal, Robert
Electric lamp and discharge devices: systems
Discharge device load with fluent material supply to the...
Plasma generating
118723R, 315326, H01J 724
Patent
active
057898677
ABSTRACT:
The invention provides apparatus and methods for improving systems that expose samples to reactive plasmas, and more particularly for igniting plasma within a process module. The systems are of the type which have an electrode pair and a radiofrequency generator connected to one electrode. Gas is injected between the electrodes where it is ionized and transformed into a plasma. The invention includes (i) ignition means for ionizing gas, e.g., silane, between electrodes which are separated by a small gap of less than approximately one centimeter; and (ii) a radiofrequency energy generator that preferably operates at high frequencies, e.g., 60 MHz, to transform molecules into plasma. Several embodiments of ignition means are taught by the invention, including: an electron source, an ultraviolet source, a second radiofrequency energy generator, and radioactive sources, among others. A process module constructed according to the invention, using high frequency energy and small electrode separations, has a high rate of deposition and a high production yield.
REFERENCES:
patent: 4557819 (1985-12-01), Meacham
patent: 4563367 (1986-01-01), Sherman
patent: 4617079 (1986-10-01), Tracy et al.
patent: 4664938 (1987-05-01), Walker
patent: 4933203 (1990-06-01), Curtins
patent: 4990365 (1991-02-01), Treichel et al.
patent: 5085727 (1992-02-01), Steger
patent: 5102496 (1992-04-01), Savas
patent: 5108860 (1992-04-01), Birkle et al.
patent: 5110437 (1992-05-01), Yamada et al.
patent: 5252178 (1993-10-01), Moslehi
patent: 5308950 (1994-05-01), Ramm
patent: 5368676 (1994-11-01), Nagasaki
patent: 5387842 (1995-02-01), Roth et al.
A. Shah et al., "A Si-H Films Deposited at High Rates in a VHF Silane Plasma: Potential for Low Cost Solar Cells", p. 282, Sep. 1988, 20th IEEE Photovoltaic Specialists Conference, 26-30 May 1988, held at Las Vegas, NV.
H. Curtins et al., "Influence of Plasma Excitation Frequency for a Si-H Thin Film Deposition", J. Plasma Chem. and Plasma Processing, vol. 7, No. 3, pp. 267-273, 1987.
European Search Report mailed Jun. 6, 1995.
H. Curtins, "High Rate Deposition of Amorphous Hydrogenated Silicon: Effect of Plasma Excitation Frequency", IEE, vol. 23, No. 5, 26th Feb. 1987.
H. Curtins et al., "Influence of Plasma Excitation Frequency on Deposition Rate and on film Properties for Hydrogenated Amorphous Silicon." Mat. Res. Soc. Symp. Proc., vol. 95, pp. 249-253, Apr. 1987.
A. Shah et al., "High Rate Deposition of Amorphous Silicon by VHF Glow Discharge for Solar Cell Applications", vol. 1 p. 876, May 1988, 8th E.C. Photovotaic Solar Energy Conference, held at Florence, IT, 9-13 May 1988.
H. Curtins et al., "High Rate Deposition of Hydrogenated Amorphous Silicon by the VHF GD Method.", pp. 695-698, May 1987, 19th IEEE Photovoltaic Specialists Conference, 4-8 May 1987, held at New Orleans, LA.
C.W. Pearce et al., "Characteristics of silicon nitride deposited by plasma-enhanced chemical vapor deposition using a dual frequency radio-frequency source", J. Appl. Phys., vol. 71, No. 4, pp. 1838-1841, Feb. 1992.
E.P. van de Ven et al., "Advantages of Dual Frequency PECVD for Deposition of ILD and Passivation Films", 1990, Presented at V.I.C. conference 1990.
E.P. van de Ven, "Advances in Plasma Enhanced Thin Film Deposition", SPIE, vol. 1037, pp. 117-124, Nov. 1988.
Berrian Donald
Meiling Hans
Vanderpot John William
Westendorp Han
Pascal Robert
Shingleton Michael
TEL America, Inc.
LandOfFree
Apparatus and method for igniting plasma in a process module does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for igniting plasma in a process module, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for igniting plasma in a process module will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1180666