Apparatus and method for hydrogenating polysilicon thin film tra

Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Ionized irradiation

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438162, 118723I, C23C 1648

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058830162

ABSTRACT:
A method for hydrogenating a thin film semiconductor wafer and an apparatus for performing the method. The method comprises the steps of applying a pulsed potential having a predetermined amplitude, a predetermined frequency, and a predetermined pulse duration to the thin film semiconductor wafer while exposing the thin film semiconductor wafer to a hydrogen plasma. The apparatus performs this method through the utilization of an inductively-coupled plasma (ICP) source so as to allow saturation of device parameter improvements within a reduced process time of 5 minutes. The ICP source allows this reduced process time to be achieved in a low energy, high dose rate plasma immersion ion implantation (PIII) hydrogenation process according to the present invention.

REFERENCES:
patent: 4764394 (1988-08-01), Conrad
patent: 4891118 (1990-01-01), Ooiwa et al.
patent: 5085750 (1992-02-01), Soraoka
patent: 5131752 (1992-07-01), Yu
patent: 5250444 (1993-10-01), Khan et al.
patent: 5281546 (1994-01-01), Possin et al.
patent: 5354381 (1994-10-01), Sheng
S. Qin, et al., "An Evaluation of Contamination From Plasma Immersion Ion Implantation on Silicon Device Characteristics", Accept and Appear in March issue of Journal of Electronic Materials, vol. 23, 1994, pp. 1-14.
S. Qin, et al., "The Response of a Microwave Multipolar Bucket Plasma to A High Voltage Pulse",IEEE Transactions on Plasma Science, vol. 19, No. 6, Dec., 1991.
M. Guerra, "The Status of Simox Technology", Solid State Technology, Nov., 1990, pp. 75-78.
C. Chan, et al., "Gas Fuelling of RF-Sustained Tandem Mirror End Plugs", Nuclear Fusion, vol. 24, No. 1, 1984, pp. 103-113.
S. Qin, et al., "Energy Distribution of Boron Ions During Plasma Immersion Ion Implantation", Plasma Sources Sci. Technol., 1992, pp. 1-6.
S. Qin, et al., "Plasma Immersion Ion Implantation Doping Using A Microwave Mulipolar Bucket Plasma", IEEE Transactions on Electron Devices, vol. 39, No. 10, Oct., 1992.

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