Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of... – Ionized irradiation
Patent
1996-04-04
1999-03-16
Bueker, Richard
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
Ionized irradiation
438162, 118723I, C23C 1648
Patent
active
058830162
ABSTRACT:
A method for hydrogenating a thin film semiconductor wafer and an apparatus for performing the method. The method comprises the steps of applying a pulsed potential having a predetermined amplitude, a predetermined frequency, and a predetermined pulse duration to the thin film semiconductor wafer while exposing the thin film semiconductor wafer to a hydrogen plasma. The apparatus performs this method through the utilization of an inductively-coupled plasma (ICP) source so as to allow saturation of device parameter improvements within a reduced process time of 5 minutes. The ICP source allows this reduced process time to be achieved in a low energy, high dose rate plasma immersion ion implantation (PIII) hydrogenation process according to the present invention.
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Chan Chung
Qin Shu
Bueker Richard
Northeastern University
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