Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-11
2006-07-11
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S315000, C257S316000, C257S320000, C257S321000, C257S322000, C257S326000
Reexamination Certificate
active
07075143
ABSTRACT:
A nonvolatile semiconductor memory device enabling a high sensitivity read operation by a low voltage, provided with a gate insulating film comprised of a bottom insulating film, a charge storing film, and a top insulating film successively stacked from the bottom, the bottom insulating film including a silicon oxynitride film directly under the charge storing film, and reading a bit of data stored at a local portion of a sub-source line side of a memory transistor and a bit of data stored at a local portion of a sub-bit line side independently by the reverse read method, whereby the incubation time is suppressed by the presence of silicon oxynitride, the controllability of the thickness of the charge storing film is improved, and the threshold voltage in an erase state is decreased, and a method of high sensitivity reading whereby a lower voltage and improved operational reliability are achieved.
REFERENCES:
patent: 5768192 (1998-06-01), Eitan
patent: 6444521 (2002-09-01), Chang et al.
patent: 6906390 (2005-06-01), Nomoto et al.
patent: 6949788 (2005-09-01), Fujiwara et al.
Fujiwara Ichiro
Nakagawara Akira
Huynh Andy
Kauanen Ronald P.
Rader, Fishman & Gauper PLLC
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