Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-21
2007-08-21
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S509000, C438S522000, C118S725000
Reexamination Certificate
active
11110933
ABSTRACT:
An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.
REFERENCES:
patent: 4425143 (1984-01-01), Nishizawa et al.
patent: 5413866 (1995-05-01), Baker et al.
patent: 5866263 (1999-02-01), Hogan et al.
patent: 6183566 (2001-02-01), Lawing et al.
patent: 6818783 (2004-11-01), Norman et al.
patent: 11-40748 (1999-02-01), None
patent: 2002-91539 (2000-03-01), None
patent: WO97/15069 (1997-04-01), None
Sugino et al., “Dry Cleaning of Si and SiO2 Surfaces using SiC14 System”, 1995 Symposium on Semiconductor Manufacturing 1995, IEEE, pp. 262-265.
Koujien, edited by I. Nimura, 1st version, Iwanami Shoten, dated Mar. 10, 1968.
Arisumi Osamu
Itokawa Hiroshi
Kanaya Hiroyuki
Kumura Yoshinori
Nakazawa Keisuke
Smith Matthew
Tobergte Nicholas J.
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