Apparatus and method for heat treating thin film

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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C438S509000, C438S522000, C118S725000

Reexamination Certificate

active

11110933

ABSTRACT:
An apparatus for manufacturing a semiconductor device is disclosed which comprises a chamber which holds a to-be-processed substrate having a film containing at least one kind of metal element which will become a component of a volatile metal compound, a heater which heats the substrate held in the chamber, and an adsorbent which is provided in the chamber and which adsorbs the volatile metal compound generated from the film by heating the substrate.

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Sugino et al., “Dry Cleaning of Si and SiO2 Surfaces using SiC14 System”, 1995 Symposium on Semiconductor Manufacturing 1995, IEEE, pp. 262-265.
Koujien, edited by I. Nimura, 1st version, Iwanami Shoten, dated Mar. 10, 1968.

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