Apparatus and method for growth of large single crystals in plat

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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1566162, 1566163, 1566164, 15661641, 156DIG83, 156DIG88, 1641221, 1641222, C30B 1102

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051164566

ABSTRACT:
Apparatus and method for controlled growth of large single crystals in plate/slab form from a melt, characterized by a crucible having a narrow thickness dimension that is small enough to permit adequate control over the growth interface across the full width of the crucible and a scalable larger width dimension permitting the growth of crystals having a width many times the thickness of the grown crystal. The apparatus and method are further characterized by side heating members located in close proximity to the wider side walls and the hence the melt across the width of the crucible for obtaining and maintaining control over the growth interface. The apparatus and method are scalable for the growth of large single crystals such as 1 meter by 1 meter square crystals which heretofore were not obtainable by known apparatus and melt growth methods at least in the case of single crystals such as calcium fluoride.

REFERENCES:
patent: 2640861 (1953-06-01), Kremers
patent: 3139653 (1964-07-01), Orem
patent: 3538981 (1970-11-01), Phipps
patent: 3770047 (1973-11-01), Kirkpatrick et al.
patent: 3897815 (1975-08-01), Smashey
patent: 3898051 (1975-08-01), Schmid
patent: 4038201 (1977-07-01), Hargreaves
patent: 4083748 (1978-04-01), Gault
patent: 4096025 (1978-06-01), Caslavsky et al.
patent: 4110080 (1978-08-01), Pastor
patent: 4251315 (1981-02-01), Pastor
patent: 4289570 (1981-09-01), Terkelsen
patent: 4382838 (1983-05-01), Authier
patent: 4510609 (1985-04-01), Caslavsky et al.
patent: 4521272 (1985-06-01), Gault
patent: 4533822 (1985-08-01), Fujii et al.
patent: 4703556 (1987-11-01), Wilsey
patent: 4767493 (1988-08-01), Mino
Crszek et al., "Solar-Grade Silicon by Directional Solidification in Carbon Crucibles", IBM, J. Res. Develop, vol. 23, No. 3, May 1979, 270-277.
Reed et al., "Growth of Ni-Doped MgF2 Crystals in Self Sealing Graphite Crucibles", Journal of Crystal Growth, 42(1977), Dec., pp. 569-573.
Atherton Abstract, "Modelling Bridgman Growth of YAG:Nd in Ampoules of Rectangular Cross-Section," Abstracts of The Seventh American Conference on Crystal Growth, pp. 7 and 8, Jul. 12-17, 1987.
Cooper et al., Abstract, "Growth of YAG:Nd in Metal Ampoules by a Modified Bridgman Technique," Abstracts of the Seventh American Conference on Crystal Growth, pp. 437 and 438, Jul. 12, 1987.

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