Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design
Reexamination Certificate
2006-07-03
2008-11-11
Do, Thuan (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Nanotechnology related integrated circuit design
C716S030000, C716S030000, C716S030000, C716S030000, C703S014000
Reexamination Certificate
active
07451430
ABSTRACT:
In a transistor model generating apparatus, a transistor region extracting section extracts a non-rectangular transistor region, in which a gate region is formed above a non-rectangular diffusion layer region, from a mask layout data of a semiconductor integrated circuit. A dividing section sets a division line extending in a direction of a gate length of a transistor to divide the non-rectangular transistor region into a plurality of rectangular transistor regions. A relating section relates the non-rectangular transistor region and the plurality of rectangular transistor regions with the mask layout data. A size calculating section calculates a size data of each of the plurality of rectangular transistor regions. A correction value calculating section calculates a correction value of a diffusion layer length dependency parameter to the plurality of rectangular transistor regions based on the size data. A transistor model registering section registers a transistor model of the transistor for a circuit simulation based on the diffusion layer length dependency parameter and the correction value.
REFERENCES:
patent: 7049589 (2006-05-01), Yamaguchi et al.
patent: 10-162047 (1998-06-01), None
patent: 2004-119608 (2004-04-01), None
Do Thuan
NEC Electronics Corporation
Sughrue & Mion, PLLC
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