Apparatus and method for generating plasma of uniform flux densi

Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating

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31511141, H01J 3700

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active

054499771

ABSTRACT:
Under a reduced pressure, an RF electric field is applied at a right angle to a main face of an article-to-be-treated such as a semiconductor, wafer placed on a cathode in treatment chamber. At the same time, a magnetic field is applied thereto by a magnetic field applying device to generate a plasma by a magnetron discharge. The magnetic field is formed in such a fashion that adjacent magnetic lines of flux are not in parallel with one another on the main face of the article-to-be-treated. Charged particles in the plasma drift in a diverging direction with Lorenz force so as to prevent electrification of the article-to-be-treated.

REFERENCES:
patent: 4950956 (1990-08-01), Asamaki et al.
patent: 5032202 (1991-07-01), Tsai et al.
patent: 5079481 (1992-01-01), Moslehi
patent: 5081398 (1992-01-01), Asmussen et al.
Chen, "Introduction To Plasma Physics And Controlled Fusion", 2nd Ed., vol. 1, Chap. 2, 1984, Plenum Press, New York, pp. 19-51.

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