Apparatus and method for forming thin film using upstream...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S682000, C257SE21269, C257SE21274, C257SE21302, C257SE21319

Reexamination Certificate

active

07408225

ABSTRACT:
A thin-film formation apparatus possesses a reaction chamber to be evacuated, a placing portion on which a substrate is placed inside the reaction chamber, a gas-dispersion guide installed over the placing portion for supplying a gas onto a substrate surface, a gas-supply port for introducing the gas into the gas-dispersion guide, a gas-dispersion plate disposed on the side of the substrate of the gas-dispersion guide and having multiple gas-discharge pores, a first exhaust port for exhausting, downstream of the gas-dispersion plate, the gas supplied onto the substrate surface from the gas-dispersion plate, and a second exhaust port for exhausting, upstream of the gas-dispersion plate, a gas inside the gas-dispersion guide via a space between the gas-dispersion guide and the gas-dispersion plate.

REFERENCES:
patent: 5755878 (1998-05-01), Habuka et al.
patent: 5938840 (1999-08-01), Habuka et al.
patent: 2001/0006093 (2001-07-01), Tabuchi et al.
patent: 2003/0106643 (2003-06-01), Tabuchi et al.

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