Apparatus and method for forming I-III-VI.sub.2 thin-film layers

Details Apparatus and method for forming I-III-VI.sub.2 thin-film layers Apparatus and method for forming I-III-VI.sub.2 thin-film layers

1997-04-28

1999-08-10

Utech, Benjamin

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With pretreatment or preparation of a base

117109, 427 74, 427 76, 438 95, 438930, 136264, 136265, H01L 310264, B05D 512, C30B 2306

Patent

active

059353244

ABSTRACT:
An apparatus for forming I-III-VI.sub.2 thin-film layers has a reaction chamber made of a carbon material in which a precursor for forming a I-III-VI.sub.2 thin-film layer and a vapor source of an element of group VI of the periodic table are placed. The precursor and vapor source are heated under vacuum to form the I-III-VI.sub.2 thin-film layer. The reaction chamber is divided into a reaction compartment A having the precursor placed therein and a reaction compartment B having the vapor element of group IV placed therein. A communication channel C is provided between the reaction compartments A and B, and a heating unit controlled by a temperature control unit is provided exterior to each of the reaction compartments A and B.

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