Apparatus and method for fabricating metal paths in semiconducto

Details Apparatus and method for fabricating metal paths in semiconducto Apparatus and method for fabricating metal paths in semiconducto

1995-11-21

1999-01-12

Jones, David

Metal deforming

By application of fluent medium, or energy field

723427, 29530, H01L 2100, B21D 2602

Patent

active

058573682

ABSTRACT:
A high pressure metallization apparatus provides a chamber for enclosing or enveloping a substrate in a high pressure environment, and thereby extrude a film layer into any voids in the covers holes or trenches thereon. The high pressure is maintained in a pressure chamber, which is substantially enclosed within a vacuum chamber. The apparatus includes a positioning member which relatively rigidly positions the pressure chamber plugs during high pressure operations, and also allows separation of the plugs to enable pressure chamber access. The apparatus is configured for relatively rapid access to the internal components thereof, for rapid service and cleaning turnaround. Additionally, the chamber is configured to have minimal relative movement between the structural elements thereof, to reduce particle generation in the apparatus.

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