Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal
Reexamination Certificate
2006-04-18
2006-04-18
Schillinger, Laura M. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Responsive to non-electrical signal
C205S775000
Reexamination Certificate
active
07030452
ABSTRACT:
A method for forming atomic-scale contacts and atomic-scale gaps between two electrodes is disclosed. The method provides for applying a voltage between two electrodes in a circuit with a resistor. The applied voltage etches metal ions off one electrode and deposits the metal ions onto the second electrode. The metal ions are deposited on the sharpest point of the second electrode, causing the second electrode to grow towards the first electrode until an atomic-scale contact is formed. By increasing the magnitude of the resistor, the etching and deposition process will terminate prior to contact, forming an atomic-scale gap. The atomic-scale contacts and gaps formed according to this method are useful as a variety of nanosensors including chemical sensors, biosensors, hydrogen ion sensors, heavy metal ion sensors, magnetoresistive sensors, and molecular switches.
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Boussaad Salah
Tao Nongjian
Arizona Board of Regents
Atkins Robert D.
Quarles & Brady Streich & Lang LLP
Schillinger Laura M.
LandOfFree
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