Apparatus and method for determining the logic state of a...

Details Apparatus and method for determining the logic state of a... Apparatus and method for determining the logic state of a...

2005-10-11

2005-10-11

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

06954373

ABSTRACT:
A system and method for determining the logic state of a magnetic tunnel junction (MTJ) memory device. The method includes applying a first bias voltage to a selected line and measuring a first induced voltage across the MJT device or a memory cell. The method also includes applying a second bias voltage to the selected line, the second bias voltage being different from the first bias voltage, and measuring a second induced voltage across the MJT device. The method also includes comparing a function of the first bias voltage, the first induced voltage, the second bias voltage, and the second induced voltage to a threshold value.

REFERENCES:
patent: 6587371 (2003-07-01), Hidaka
patent: 6813208 (2004-11-01), Baker

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