Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-01-25
2011-01-25
Nguyen, VanThu (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S163000, C365S189150, C365S189090, C365S185030
Reexamination Certificate
active
07876598
ABSTRACT:
A determination of the memory state of a resistive n-level memory cell is described. The determination includes charging or discharging a read capacity of the memory cell by applying a voltage between a first electrode and a second electrode of the resistive memory cell. A voltage at the second electrode is compared to a reference voltage to obtain a comparison signal. The comparison signal is sampled at, at least, (n−1) time instants during the charge or discharge of the read capacity to obtain sampling values. The memory state of the memory cell can be determined based upon the sampling values.
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Dietrich Stefan
Schroegmeier Peter
Economou John S.
Nguyen Vanthu
Qimonda AG
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