Electricity: measuring and testing – Measuring – testing – or sensing electricity – per se – With rotor
Reexamination Certificate
2005-12-08
2008-10-21
Nguyen, Ha Tran (Department: 2829)
Electricity: measuring and testing
Measuring, testing, or sensing electricity, per se
With rotor
C324S750010, C324S764010
Reexamination Certificate
active
07439730
ABSTRACT:
A system, apparatus, and method for analyzing photon emission data to discriminate between photons emitted by transistors and photons emitted by background sources. The analysis involves spatial and/or temporal correlation of photon emissions. After correlation, the analysis may further involve obtaining a likelihood that the correlated photons were emitted by a transistor. After correlation, the analysis may also further involve assigning a weight to individual photon emissions as a function of the correlation. The weight, in some instances, reflecting a likelihood that the photons were emitted by a transistor. The analysis may further involve automatically identifying transistors in a photon emission image.
REFERENCES:
patent: 4091277 (1978-05-01), Doblhofer
patent: 4115694 (1978-09-01), Lange et al.
patent: 4242635 (1980-12-01), Burns
patent: 4415807 (1983-11-01), Friauf et al.
patent: 4431914 (1984-02-01), Mourou et al.
patent: 4555731 (1985-11-01), Zinchuk
patent: 4591984 (1986-05-01), Mori
patent: 4680635 (1987-07-01), Khurana
patent: 4686371 (1987-08-01), Birch et al.
patent: 4704522 (1987-11-01), Hirai et al.
patent: 4706018 (1987-11-01), Beha et al.
patent: 4755874 (1988-07-01), Esrig et al.
patent: 4766372 (1988-08-01), Rao
patent: 4811090 (1989-03-01), Khurana
patent: 4845425 (1989-07-01), Beha et al.
patent: 4858128 (1989-08-01), Nowak
patent: 4922092 (1990-05-01), Rushbrooke et al.
patent: RE33241 (1990-06-01), Tsuchiya
patent: 4992662 (1991-02-01), Danilatos
patent: 5006717 (1991-04-01), Tsutsu et al.
patent: 5043584 (1991-08-01), Koishi
patent: 5164664 (1992-11-01), Soelkner
patent: 5168164 (1992-12-01), Urakami et al.
patent: 5175495 (1992-12-01), Brahme et al.
patent: 5301006 (1994-04-01), Bruce
patent: 5304791 (1994-04-01), Migliaccio
patent: 5391885 (1995-02-01), Imataki et al.
patent: 5424558 (1995-06-01), Borden et al.
patent: 5451863 (1995-09-01), Freeman
patent: 5475316 (1995-12-01), Hurley et al.
patent: 5504431 (1996-04-01), Maeda et al.
patent: 5523694 (1996-06-01), Cole, Jr.
patent: 5541547 (1996-07-01), Lam
patent: 5561293 (1996-10-01), Peng et al.
patent: 5598100 (1997-01-01), Maeda et al.
patent: 5650643 (1997-07-01), Konuma
patent: 5656807 (1997-08-01), Packard
patent: 5661520 (1997-08-01), Bruce
patent: 5724131 (1998-03-01), Chim et al.
patent: 5754291 (1998-05-01), Kain
patent: 5760892 (1998-06-01), Koyama
patent: 5869842 (1999-02-01), Kang et al.
patent: 5940545 (1999-08-01), Kash et al.
patent: 5970167 (1999-10-01), Colvin
patent: 6028434 (2000-02-01), Bushman
patent: 6049079 (2000-04-01), Noordam et al.
patent: 6076010 (2000-06-01), Boas et al.
patent: 6078681 (2000-06-01), Silver
patent: 6078877 (2000-06-01), Fujii et al.
patent: 6172512 (2001-01-01), Evans et al.
patent: 6225626 (2001-05-01), Talbot et al.
patent: 6327394 (2001-12-01), Kash et al.
patent: 6469529 (2002-10-01), Bruce et al.
patent: 6496022 (2002-12-01), Kash et al.
patent: 6515304 (2003-02-01), Kash et al.
patent: 6521479 (2003-02-01), Harrison et al.
patent: 6526415 (2003-02-01), Smith et al.
patent: 6621275 (2003-09-01), Cotton et al.
patent: 6657222 (2003-12-01), Foden et al.
patent: 6891363 (2005-05-01), Desplats et al.
patent: 6895372 (2005-05-01), Knebel et al.
patent: 6943572 (2005-09-01), Desplats et al.
patent: 2005/0146321 (2005-07-01), Desplats et al.
patent: 2005/0231219 (2005-10-01), Desplats et al.
patent: WO 2004/023521 (2004-03-01), None
patent: WO 2004/053780 (2004-06-01), None
Firmani, C. et al., “High-Resolution Imaging With a Two-Dimensional Resistive Anode Photon Counter”, Rev. Sci. Instrum. 53 (5); pp. 570-574, (May 1982).
Charbonneau, S. et al., “Two-Dimensional Time-Resolved Imaging with 100-ps Resolution Using a Resistive Anode Photomultiplier Tube”, Rev. Sci. Instrum., 63 (11), pp. 5315-5319, (Nov. 1992).
Shah, Jagdeep et al., “Subpicosecond Luminescence Spectroscopy Using Sum Frequency Generation”, Appl. Phys. Lett., pp. 1307-1309, (May 1987).
McMullan, W. G. et al., “Simultaneous Subnanosecond Timing Information and 2D Spatial Information From Imaging Photomultiplier Tubes”, Rev. Sci. Instrum., American Instititue of Physics, 58 (9), pp. 1626-1628, (Sep. 1987).
Cova, S. et al., “Constant-Fraction Circuits for Picosecond Photon Timing With Microchannel Plate Photomultipliers”, Rev. Sci. Instrum. 64 (1), pp. 118-124, Jan. 1993.
Berndt, R. et al., “Atomic Resolution in Photon Emission Induced by a Scanning Tunneling Microscope”, The American Physical Society, Physical Review Letters, vol. 74, No. 1, pp. 102-103, (1994).
Hungerford, G. et al., “Single-Photon Timing Detectors for Fluorescence Lifetime Spectroscopy”, Maes. Sci. Technol., 7, pp. 121-135, (1996).
Tsang, J. C. et al., “Picosecond Imaging Circuit Analysis”, IBM Journal of Research and Development, vol. 44, No. 4, (Jul. 2000).
Hawkins, C. et al., “The Use of Light Emission in Failure Analysis of CMOS Ics”, ISTFA, pp. 55-67, (1990).
Weste, N. et al., “Principles of CMOS VLSI Design: A Systems Perspective”, Second Edition, (1993).
“Evaluation of Hot Carrier Induced Degradation of MOSFET Devices”, Agilent Technologies, pp. 1-4, (2000).
“Photon Counting: A Brief History”, Photek, http://fp.photek.plus.com, (Date printed Nov. 8, 2002).
Dajee G. et al., “Practical, Non-Invasive Optical Probing for Flip-Chip Devices,” IEEE, pp. 433-442, (2001).
“The National Technology Roadmap for Semiconductors: Technology Needs”, SIA Semiconductor Industry Association, (1997).
“Emission Microscopy/Liquid Crystal”, Accurel Systems International Inc., http://www.accurel.com/html/Services/EMLC, (2002).
“PEM-1000 Photon Emission Microscope”, TNP Instruments, Inc., http://www.tnpinstruments.com/pen1000.htm, (1999).
“Spectroscopic Photon Emission Microscopy Studies of Semiconductor Devices”, National University of Singapore, Engineering Research, http://eng.nus.edu.sg/Eresnews, vol. 12, No. 1, (Feb. 1997).
Vasile et al., “Photon Detection With High Gain Avalanche Photodiode Arrays”, Radiation Monitoring Devices, Inc., IEEE Trans. Nucl. Sci., http://www.rmdinc.com, (1998).
Thompson, T., “Charged-Coupled Device”, Computer World, Inc., http//www.computerworld.com, (Aug. 6, 2001).
“Space Research Yields High-Tech Reward”, University of Rochester, http://www.rochester.edu, (Aug. 13, 2001).
Ouellette, J., “Failure Analysis in a Nanometer World”, The Industrial Physicist, pp. 11-14, (Jun. 1998).
Tsang, J., “The Characterization of Switching Activity in Working IC's by Picosecond Hot Carrier Emission from CMOS Gates”, University of Illinois at Urbana-Champaign College of Engineering, http://ece.uiuc.edu, (Oct. 8, 1998).
Derbyshire, K., “Prospects Bright for Optoelectronics Volume, Cost Drive Manufacturing for Optical Applications”, Semi Conductor Magazine, vol. 3, No. 3, http://www.semi.org., (Mar. 2002).
“Hot-Electron Effect in Superconductors and Its Applications for Radiation Sensors”, Cascade Microtech, Inc., LLE Review, vol. 87, 134-136, (1994).
Kikuchi, M., “Visible Light Emission and Microplasma Phenomena in Silicon p-n Junction”, Journal of the Physical Society of Japan, vol. 15, No. 12, pp. 1822-1831, (Oct. 1960).
Das, N. C. et al., Luminescence Spectra of an n-Channel Metal-Oxide-Semiconductor Field-Effect Transistor at Breakdown, Appl. Phys. Lett. 56 (12), pp. 1152-1153, (Mar. 19, 1990).
Kuo, M. M. et al., “Simulation of MOSFET Lifetime Under AC Hot-Electron Stress”, IEEE Transactions on Electron Devices, vol. 35, No. 7, (Jul. 1988).
Bellens, R. et al., “The Influence of the Measurement Setup on Enhanced AC Hot Carrier Degradation of MOSFET's”, IEEE Transactions of Electron Devices, vol. 37, No. 1, pp. 310-313, (Jan. 1990).
Hawkins, C. F. et al., “Quiescent Power Supply Current Measurement for CMOS IC Defect Detection”, IEEE Tran
Coupanec Patricia Le
Desplats Romain
Kasapi Steven
Lo William K.
Perdu Philippe
Bach, Esq. Joseph
DCG Systems, Inc.
Nguyen Ha Tran
Nixon & Peabody LLP
Vazquez Arleen M.
LandOfFree
Apparatus and method for detecting photon emissions from... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for detecting photon emissions from..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for detecting photon emissions from... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3992227