Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2007-12-28
2010-11-16
Le, Vu A (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S149000
Reexamination Certificate
active
07835198
ABSTRACT:
A semiconductor memory device is capable of generating a back bias voltage based on a target level changed according to a leakage current of the semiconductor memory devices, thereby minimizing the amount of the leakage current. The semiconductor memory device includes a leakage current detector and a back bias voltage generator. The leakage current detector is configured to detect a leakage current of a cell array. The back bias voltage generator is configured to generate a back bias voltage having a target level changed according to the leakage current.
REFERENCES:
patent: 5886932 (1999-03-01), Choi
patent: 5920226 (1999-07-01), Mimura
patent: 6222787 (2001-04-01), Yoon et al.
patent: 6862239 (2005-03-01), Huang et al.
patent: 7009904 (2006-03-01), Kim
patent: 7046074 (2006-05-01), Jang
patent: 7102936 (2006-09-01), Kim et al.
patent: 2004/0155701 (2004-08-01), Kim et al.
patent: 2006/0221749 (2006-10-01), Kwean
patent: 2007/0001752 (2007-01-01), Jin
patent: 05205465 (1993-08-01), None
patent: 08-203269 (1996-08-01), None
patent: 2006-190435 (2006-07-01), None
patent: 2006-190436 (2006-07-01), None
patent: 100193103 (1999-02-01), None
patent: 102000000877 (2000-02-01), None
patent: 100263529 (2000-05-01), None
patent: 102000004247 (2000-07-01), None
patent: 10-2000-0075605 (2000-12-01), None
patent: 102001000401 (2001-01-01), None
patent: 102001000526 (2001-01-01), None
patent: 102003000265 (2003-01-01), None
patent: 10-2006-0007758 (2006-01-01), None
Notice of Preliminary Rejection issued from the Korean Intellectual Property Office on Feb. 28, 2008 with an English translation.
Notice of Preliminary Rejection issued from Korean Intellectual Property Office on May 11, 2010.
Filed Examiner's Answer to Appeal Brief with the Patent Court of Korea on Oct. 13, 2009.
Filed Examiner's Answer to Reply Brief with the Patent Court of Korea on Jan. 6, 2010.
Yoo, “Dram Design,” Hongrung Publishing Company, 1996, pp. 6-7 and pp. 208-211.
Choi Jun-Gi
Shin Yoon-Jae
Hynix / Semiconductor Inc.
IP & T Group LLP
Le Vu A
LandOfFree
Apparatus and method for detecting leakage current of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for detecting leakage current of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for detecting leakage current of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4222332