Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1995-12-27
1998-11-03
Loring, Susan A.
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
118723R, 20429832, C23F 102, C23C 1600, C23C 1400
Patent
active
058303103
ABSTRACT:
For use with CVD apparatus, an apparatus and method for detecting the end point of a post treatment after an in-situ cleaning operation is provided such that reactive chemical species which remain after an in-situ cleaning operation can be accurately removed so that they do not cause harm to a film formed after the cleaning operation. The end point detection apparatus includes a reactor, an RF electrode, an RF power supply, a gas supply pipe for forming a thin film, a gas supply pipe for in-situ cleaning, a detector for detecting discharge characteristic values (i.e. the self-bias voltage, the electrode voltage, and the discharge impedance) during the post treatment performed after the in-situ cleaning, and a monitor/determining circuit for monitoring an output from the detector. When a post treatment is performed in the reactor after in-situ cleaning, a gas for in-situ cleaning is introduced through the gas supply pipe, and the reactor is in-situ cleaned using reactive chemical species, after which the post treatment is performed in the reactor so that the remaining reactive chemical species are removed. During the post treatment, the discharge characteristic values are measured, and the point in time at which the changes in the measured values shift to nearly constant values is assumed to be the end point of the post treatment.
REFERENCES:
G. Bruno, et al. "Study of the NF3 Plasma Cleaning of Reactors for Amorphous Silicon Deposition." May/Jun. 1994, pp. 690-698.
Anelva Corporation
Loring Susan A.
Manzo Edward D.
Murphy Mark J.
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