Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Patent
1998-03-04
2000-02-29
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
257776, A07C 2941
Patent
active
060312890
ABSTRACT:
An improved multilevel interconnect structure is provided. The interconnect structure includes several levels of conductors, wherein conductors on one level are staggered with respect to conductors on another level. In densely spaced interconnect areas, interposed conductors are drawn to dissimilar elevational levels to lessen the capacitive coupling between the interconnects. By staggering every other interconnect line in the densely patterned areas, the interconnects are capable of carrying a larger amount of current with minimal capacitive coupling therebetween.
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Bandyopadhyay Basab
Brennan William S.
Dawson Robert
Fulford Jr. H. Jim
Hause Fred N.
Advanced Micro Devices , Inc.
Daffer Kevin L.
Hardy David B.
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