Apparatus and method for depositing molecular impurities on a se

Details Apparatus and method for depositing molecular impurities on a se Apparatus and method for depositing molecular impurities on a se

1996-12-26

1999-02-16

Bueker, Richard

Coating processes

Coating by vapor, gas, or smoke

118715, C23C 1600

Patent

active

058718125

ABSTRACT:
An apparatus for quantitatively depositing molecular impurities on a semiconductor wafer, includes a reaction chamber, a gas generator for generating a source gas serving as the molecular impurities, a humidifier for generating moisture vapour of a constant temperature, a mixer for mixing the source gas and the moisture vapour to generate a mixed gas, a gas injector for injecting the mixed gas into the reaction chamber, an exhausting part for initiating a vacuum condition in the reaction chamber before deposition of the molecular impurities and for exhausting a remaining gases after deposition of the molecular impurities, and a cleaning air supply portion for supplying a cleaning air into the reaction chamber before deposition of the molecular impurities. After fabricating a semiconductor device using the wafer processed as above, a defective source of mechanism of contamination can be traced by analysing the semiconductor device.

REFERENCES:
Gary Geschwing et al., Wafer Particle Deposition and Surface Particle Validation, IEEE/SEMI 1995 Advanced Semiconductor Manufacturing Conference & Workshop, Institute of Electrical & Electronics Engineers, Inc., New York, Nov. 1995, pp. 455-463.
Keiko Kanzawa et al., "A Semiconductor Device Manufacturer's Efforts for Controlling and Evaluating Atmospheric Pollution", 1995 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, pp. 190-193.
Makiko Tamaoki et al., "The Effect of Airborne Contaminants in the Cleanroom for ULSI Manufacturing Process", 1995 IEEE/SEMI Advanced Semiconductor Manufacturing Conference, pp. 322-326.

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