Apparatus and method for controlling process chamber pressure

Coating processes – Coating by vapor – gas – or smoke

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118715, 156345, C23C 1600

Patent

active

058718133

ABSTRACT:
The present invention provides an apparatus and methods for controlling gas pressure within a semiconductor process chamber. The apparatus comprises a fluid conduit, and a throttle valve positioned downstream of the process chamber outlet for controlling gas flow therethrough. A filter is disposed between the inlet of the fluid conduit and the throttle valve for collecting gas particles flowing through the fluid conduit to inhibit gas deposition on the throttle valve. In addition, the filter functions as a flow restrictor to reduce the gas flow rate through the fluid conduit. This allows the throttle valve to operate in a more open position for a particular desired gas pressure, which usually reduces the amount of throttle valve surfaces exposed to gas passing therethrough. Accordingly, the amount of gas deposited on these surfaces is further reduced. This configuration minimizes any friction between valve surfaces, which increases the lifetime of the throttle valve and the throughput of the process.

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