Apparatus and method for controlling diffusion

Details Apparatus and method for controlling diffusion Apparatus and method for controlling diffusion

2005-08-30

2010-06-01

Monbleau, Davienne (Department: 2893)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

C438S369000, C438S541000, C257SE21056, C257SE21135, C257SE21142, C257SE21153

Reexamination Certificate

active

07727868

ABSTRACT:
A method and device for reducing a dopant diffusion rate in a doped semiconductor region is provided. The methods and devices include selecting a plurality of dopant elements. Selection of a plurality of dopant elements includes selecting a first dopant element with a first atomic radius larger than a host matrix atomic radius and selecting a second dopant element with a second atomic radius smaller than a host matrix atomic radius. The methods and devices further include selecting amounts of each dopant element of the plurality of dopant elements wherein amounts and atomic radii of each of the plurality of dopant elements complement each other to reduce a host matrix lattice strain. The methods and devices further include introducing the plurality of dopant elements to a selected region of the host matrix and annealing the selected region of the host matrix.

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