Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With microwave gas energizing means
Patent
1996-06-11
1998-08-04
Powell, William
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With microwave gas energizing means
134 11, 216 67, 438730, H01L 2100
Patent
active
057887993
ABSTRACT:
In accordance with the present invention, a temperature-controlled ceramic liner or barrier is used adjacent to process chamber surfaces during a plasma-comprising process, with the liner or barrier temperature being set to reduce the formation of deposits upon or to aid in the removal of deposits from the liner surface during the processing of a semiconductor substrate within the process chamber. In the alternative, cleaning of the process chamber surface is carried out after the semiconductor substrate is removed from the chamber, and the liner or barrier temperature is set to assist in the removal of deposits from the liner or barrier surface. Deposits accumulate on some process chamber surfaces faster than on others. Since the rate of deposit formation or removal is temperature dependent, the temperature-controlled ceramic liner may be constructed to enable independent temperature settings at different locations within the liner. When multiple temperature-controllable barriers are used, each barrier may be set at a different temperature in proportion to the deposit formation reduction or removal requirements in the area of the process chamber protected by the particular barrier. In a preferred embodiment of the invention, the plasma used either during the semiconductor substrate processing or during a cleaning process after removal of the substrate from the process chamber is generated externally from the process chamber and is fed into the process chamber through a conduit. The conduit or at least the interior surface of the conduit which contacts the plasma is comprised of a halogen-containing material. The halogen used in the conduit material may be selected in consideration of the active species which is to be fed through the interior of the conduit.
REFERENCES:
patent: 4960488 (1990-10-01), Law et al.
patent: 5085727 (1992-02-01), Steger
patent: 5089441 (1992-02-01), Mosiehi
patent: 5174858 (1992-12-01), Hwang et al.
patent: 5252892 (1993-10-01), Koshiishi et al.
patent: 5366585 (1994-11-01), Robertson et al.
patent: 5472509 (1995-12-01), Hiroshi
patent: 5552124 (1996-09-01), Su
patent: 5578131 (1996-11-01), Ye et al.
patent: 5647913 (1997-07-01), Blalock
"Plasma polymerization of fluorocarbons in re capacitively coupled diode system", E. Kay and A. Dilks, J. Vac. Sci. Technol 18(1)Jan./Feb. 1981, pp. 1-11.
"Today's Plasma Etch Chemistries", Peter H. Singer, Associate Editor, Semiconductor International, Mar. 1988, pp. 68-73.
U.S. application No. 8,278,605, Law.
Redeker Fred C.
Steger Robert J.
Applied Materials Inc.
Church Shirley L.
Powell William
LandOfFree
Apparatus and method for cleaning of semiconductor process chamb does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Apparatus and method for cleaning of semiconductor process chamb, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and method for cleaning of semiconductor process chamb will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1173192