Apparatus and method for breakdown protection of a source...

Details Apparatus and method for breakdown protection of a source... Apparatus and method for breakdown protection of a source...

2008-07-22

2008-07-22

Ha, Nathan W (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S360000

Reexamination Certificate

active

07402869

ABSTRACT:
A breakdown protection circuit for a source follower comprising a field effect transistor (FET). The protection circuit comprises a plurality of PFET's and NFET's that are controlled to exhibit on and off states for advantageously configuring a gate, source, drain and body of the source follower FET, to avoid breakdown of and forward biasing of certain FET junctions.

REFERENCES:
patent: 5469085 (1995-11-01), Shibata et al.
patent: 6057998 (2000-05-01), Sakamoto et al.
patent: RE37593 (2002-03-01), Etoh et al.
patent: 6697241 (2004-02-01), Smith
Annema, et al; “5.5-V I/O in a 2.5-V 0.25-μm CMOS Technology”; IEEI Journal of Solid-State Circuits, vol. 6, No. 5, Mar. 2001; pp. 528-538.

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