Apparatus and method for analyzing foreign matter on semiconduct

Radiant energy – Inspection of solids or liquids by charged particles – Electron probe type

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250307, H01J 37256

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active

055503721

ABSTRACT:
A device for analyzing foreign matter on semiconductor wafers is provided, which is capable of analyzing a great deal of foreign matter rapidly without requiring the higher level decision capabilities of a skilled analyst. The device for analyzing foreign matter on semiconductor wafers includes a scanning electron microscope (SEM) which obtains the composition ratios of each element of a plurality of foreign matter adhered to semiconductor wafers. A foreign matter plotting section is provided to obtain the distribution of the composition ratios of the plurality of foreign matter on the basis of a result obtained by the SEM. A foreign matter classifying process section classifies the plurality of foreign matter on the basis of the distribution. A foreign matter identifying process section compares the foreign matter classification result with data stored in advance in a foreign matter data base, thereby identifying the foreign matter type.

REFERENCES:
patent: 4037101 (1977-07-01), Okumura et al.
patent: 4857731 (1989-08-01), Tagata
patent: 5233191 (1993-08-01), Noguchi et al.
Kawahigashita, Takashi; "Handoutai Hyoka Gijitsu (Semiconductor Technique)"pp. 166-172. Sangyo-Tosho, Feb. 28, 1989.
Usami, Akira; "100 Rei ni Miru Handoutai Hyoka Gijutsu (Semiconductor Evaluation Techniques: 100 cases)"; May 1, 1988.

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