Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1994-06-29
1996-04-16
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
365149, 327530, G11C 1124
Patent
active
055089623
ABSTRACT:
The plate voltage for a Dynamic Random Access Memory storage cell array is provided by two amplifiers. The first amplifier operates at a relatively low power level and compensates for leakage in the storage cell array, the compensation initiated by a departure of the plate from a nominal value which exceeds a preselected amount. The second amplifier operates at a higher power level and provides compensation for transients in the plate voltage resulting from the charging and discharging of the storage cells. Because the transients occur when the storage cells are accessed, the second amplifier is enabled only when a group of storage cells is accessed. In addition to operating at a higher power level, the second amplifier is more sensitive and responds to smaller excursions from the nominal voltage. Both the first and the second amplifiers have separate driver circuits for responding to excursions above and for responding to excursions below the nominal voltage.
REFERENCES:
patent: 4799193 (1989-01-01), Horiguchi et al.
patent: 5079743 (1992-01-01), Suwa et al.
patent: 5253205 (1993-10-01), Eaton, Jr.
patent: 5276651 (1994-01-01), Sakamoto
patent: 5317532 (1994-05-01), Ochii
McLaughlin Daniel F.
Walker Darryl G.
Dinh Son
Donaldson Rich
Heiting Leo
Holloway William W.
Nelms David C.
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