Apparatus and measurement procedure for the fast,...

Optics: measuring and testing – Shape or surface configuration – By specular reflection

Reexamination Certificate

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C356S601000, C250S492100, C359S212100

Reexamination Certificate

active

07133140

ABSTRACT:
Apparatus and process for fast, quantitative, non-contact topographic investigation of samples. Apparatus includes a light source, and a collimating concave mirror structured and arranged to produce a parallel beam and to direct the parallel beam to a sample to be investigated. A structured mask is located between the light source and the concave mirror, and an image sensor structured and arranged to receive a beam reflected from the sample and the concave mirror. Relative positions of the mask and the sensor to other elements of the apparatus are chosen to provide an essentially sharp image of the mask on the sensor. The instant abstract is neither intended to define the invention disclosed in this specification nor intended to limit the scope of the invention in any way.

REFERENCES:
patent: 4547073 (1985-10-01), Kugimiya
patent: 4568186 (1986-02-01), Yoshimura et al.
patent: 4705940 (1987-11-01), Kohno
patent: 4867570 (1989-09-01), Sorimachi et al.
patent: 4983039 (1991-01-01), Harada et al.
patent: 5018867 (1991-05-01), Piironen
patent: 5225890 (1993-07-01), Lee et al.
patent: 5255116 (1993-10-01), Araki et al.
patent: 5369489 (1994-11-01), Somekh
patent: 5512759 (1996-04-01), Sweatt
patent: 5627639 (1997-05-01), Mende et al.
patent: 5696581 (1997-12-01), Kubota et al.
patent: 6922482 (2005-07-01), Ben-Porath
patent: 2248500 (1992-04-01), None
patent: 02/29835 (2000-05-01), None
Yang, “An Optical Imaging Method for Wafer Warpage Measurements,”Journal of the Electrochemical Society, vol. 132, No. 5, pp. 1214-1218 (1985).
“Optical Shop Testing,” ed. Malacara, John Wiley & Sons, New York pp. 323-349 (1979).
Riesz, “Geometrical Optical Model of the Image Formation in Makyoh (Magic Mirror) Topography,”J.Phys.D: Appl. Phys., vol. 33, pp. 3033-3040, XP002229672 UK (2000).
Riesz, “Camera Length and Field of View in Makyoh-topography Instruments,” R.S.I., vol. 72, No. 2, pp. 1591-1593, XP002229673 America (Feb 2001).
Reisz, “Makyoh Topography for the Morphological Study of Compound Semiconductor Wafer and Structures,”Material Science&Engineering, vol. B80, pp. 220-223, XP002229676 NL (2001).
Szabo et al., “Makyoh Topography: Curvature Measurements and Implications for the Image Formation,”Jpn. J. Appl. Phys., vol. 35, pp. L258-L261, XP002229674 (Feb. 15, 1999).
Laczik, “Quantitative Makyoh Topography,”Proc. Annual ACM Symp. On Principles of Distributed Computing, vol. 3743, pp. 151-156, XP000874538 (May 1999).
Török et al., “Applications of Scanning Optical Microscopy in Materials Science to Detect Bulk Microdefects in Semiconductors,”Journal of Microscopy, vol. 188, No. 1, pp. 1-16, XP002229675 UK (Oct. 1997).
Koehler, “Plane-wave X-ray Topography and its Application to Semiconductor Problems,”Journal of Materials Science, Material in Electronics, Chapman and Hall, London GB, pp. 167-174, XP000912483, ISSN: 0957-4522 (May 3, 1999).
Kayaalp et al., “Using SEM Stereo to Extract Semiconductor Wafer Pattern Topography,”Proceedings of the SPIE, SPIE, Bellingham VA, US, vol. 775, pp. 18-26, XP000918713 (1987).
English Language abstract of JP 2001-1135692.
English Language abstract of JP 10-300685.
www.hologenix.com.

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