Apparatus and circuit having reduced leakage current and...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S370000, C257S371000, C257S372000, C257S373000, C438S198000, C438S199000, C438S200000

Reexamination Certificate

active

06995435

ABSTRACT:
Briefly, in accordance with one embodiment of the invention, an integrated circuit has a voltage generator that selectively increases the voltage potential on the channel region of a transistor relative to the source region of the transistor. The voltage potential may be provided to a diffusion region in the well regions with transistors.

REFERENCES:
patent: 6864708 (2005-03-01), Takahashi et al.
patent: 2004/0065941 (2004-04-01), Marr

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Apparatus and circuit having reduced leakage current and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Apparatus and circuit having reduced leakage current and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Apparatus and circuit having reduced leakage current and... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3705390

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.