Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-02-07
2006-02-07
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S370000, C257S371000, C257S372000, C257S373000, C438S198000, C438S199000, C438S200000
Reexamination Certificate
active
06995435
ABSTRACT:
Briefly, in accordance with one embodiment of the invention, an integrated circuit has a voltage generator that selectively increases the voltage potential on the channel region of a transistor relative to the source region of the transistor. The voltage potential may be provided to a diffusion region in the well regions with transistors.
REFERENCES:
patent: 6864708 (2005-03-01), Takahashi et al.
patent: 2004/0065941 (2004-04-01), Marr
Erdem Fazli
Flynn Nathan J.
Intel Corporation
Whittington Stuart A.
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