Apparatus and a method for measuring a density of defects existi

Optics: measuring and testing – Inspection of flaws or impurities – Having predetermined light transmission regions

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356337, 356343, G01N 2100

Patent

active

059952172

ABSTRACT:
A laser is irradiated on the surface of a semiconductor wafer while a stage mounted on the semiconductor wafer is moved, and scattering lights emitted from the surface of the semiconductor wafer is received by the receiving device, and an intensity distribution of the scattering lights is measured. The intensity distribution is processed by the controller so as to obtain a defect density of the semiconductor wafer.

REFERENCES:
patent: 5355212 (1994-10-01), Wells
patent: 5877860 (1999-03-01), Klein

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