Static information storage and retrieval – Read/write circuit – Erase
Patent
1994-10-27
1995-10-03
Nguyen, Tan T.
Static information storage and retrieval
Read/write circuit
Erase
36518909, 36518526, G11C 700
Patent
active
054558000
ABSTRACT:
A voltage Vpp is provided for use in programing and erasing transistors which transistors normally switch with a voltage Vpp centering at X volts in a range varying from X plus Y to X minus Y volts. When transistors in an array are selected to operate in this range, a significant number of the blocks of memory transistors require as much as three times as long to program and erase as do typical memory transistors. The invention provides circuitry for furnishing a voltage Vpp to program and erase the blocks of the memory array which voltage is controlled to be in a range of X to X+Y volts and centers around X+1/2 Y volts.
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Maxim+12V/+15V Step-Up Current-Mode PWM Regulators Advertisement, Maxim Integrated Products, 193966, Rev 1, 12 pages (Mar. 1992).
Mielke Neal
Wells Steven E.
Intel Corporation
Nguyen Tan T.
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