Aperture stop

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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Details

156647, 156656, 156657, 1566611, 156662, 156664, 640219, B23P 1516

Patent

active

042696534

ABSTRACT:
A method of manufacturing an aperture stop with a rectangular aperture for an electron beam exposure device, comprising the steps of: preparing a single-crystal silicon substrate with one side having a (100) face; providing a mask on said side of the substrate; selectively etching the substrate through the mask from said side to form a projecting portion of rectangular cross section by anisotropic etching; forming an aperture layer by covering said one side of the etched substrate with a high-melting-point metal having good electric conductivity, thereby surrounding said projecting portion; and forming in said aperture layer a rectangular aperture with a cross section corresponding to the cross section of said projecting portion by removing said substrate from the aperture layer.

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patent: 4106976 (1978-08-01), Chiou et al.
patent: 4172005 (1979-10-01), Muroaka et al.
Bassous et al., "The Fabrication . . . Silicon", Journal of Electrochemical Society, No. 8, vol. 125, pp. 1321-1327, (1978).

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