APCVD method of forming silicon oxide using an organic...

Details APCVD method of forming silicon oxide using an organic... APCVD method of forming silicon oxide using an organic...

2003-12-18

2009-02-17

Nguyen, Thanh T. (Department: 2813)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C427S568000

Reexamination Certificate

active

07491659

ABSTRACT:
In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.

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