Antireflective siliconoxynitride hardmask layer used during etch

Details Antireflective siliconoxynitride hardmask layer used during etch Antireflective siliconoxynitride hardmask layer used during etch

1998-11-06

2000-05-09

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438622, 438624, 438666, 438667, 438669, 438671, 438672, H01L 214763

Patent

active

060603801

ABSTRACT:
A method for etching openings in an integrated circuit uses siliconoxynitride as a hardmask layer. Because of the relatively low reflectivity of siliconoxynitride, when a photoresist layer is deposited on the siliconoxynitride hardmask layer and is exposed to light, the photoresist layer is patterned more conformingly to a desired pattern. The present invention may be used to particular advantage for etching contiguous trench lines and via holes in a dual damascene etch process for small dimension integrated circuits.

REFERENCES:
patent: 5612254 (1997-03-01), Mu et al.
patent: 5635423 (1997-06-01), Huang et al.
patent: 5686354 (1997-11-01), Avanzino et al.
patent: 5753967 (1998-05-01), Lin
patent: 5817572 (1998-10-01), Chiang et al.
patent: 5936707 (1999-08-01), Nguyen et al.
C.W. Kaanta, S.G. Bombardier, W.J. Cote, W.R. Hill, G. Kerszykowski, H.S. Landis, D.J. Poindexter, C.W. Pollard, G.H. Ross, J.G. Ryan, S. Wolff, and J.E. Cronin, Dual Damascene: A ULSI Wiring Technology, IEEE VMIC Conference, Jun. 11-12, 1991, pp. 144-152.

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