Antireflective coatings for use in the manufacture of semi-condu

Details Antireflective coatings for use in the manufacture of semi-condu Antireflective coatings for use in the manufacture of semi-condu

1984-06-12

1986-10-14

Ivy, C. Warren

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Radiation sensitive composition or product or process of making

430318, 524592, G03C 184, G03F 726

Patent

active

046172521

ABSTRACT:
Disclosed are antireflective layers for use in the manufacture of semi-conductor devices, methods and solutions for making such antireflective layers, and the use of such antireflective layers to absorb light in ultraviolet photolithography. The antireflective layers that are utilized comprise a polyphenylquinoxaline.

REFERENCES:
Brewer et al., "The Reduction of the Standing-Wave Effect in Positive Photoresists", Journal of Applied Photographic Engineering, vol. 7, No. 6, at pp. 184-186 (Dec. 1981).
Lin et al., "Use of Antireflective Coating in Bilayer Resist Process", J. Vac. Sci. Technol. B 1(4), at pp. 1215-1218 (Oct.-Dec. 1983).
Arden et al., "Contrast Improvement by Antireflection Coatings for Mask and Wafer in 10:1 Projection Optics", (date and source unknown).
Reichmanis et al., "Materials for Multilevel Resist Schemes", Polymer Engineering and Science, vol. 23, No. 18 at pp. 1039-1042 (Dec. 1983).
Johnson, "Multilayer Resist Processes & Alternatives", Semiconductor International, at pp. 83-88 (Mar. 1984).
Wrasidlo and Augl, "Phenylated Polyquinoxalines from Bis(phenylglyoxaloyl)benzene", Journal of Polymer Science: Part A-1, vol. 7 at pp. 3393-3405 (1969).

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