Antireflective coating for use during the manufacture of a...

Details Antireflective coating for use during the manufacture of a... Antireflective coating for use during the manufacture of a...

2005-08-30

2005-08-30

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

C438S636000, C438S710000, C438S711000

Reexamination Certificate

active

06936539

ABSTRACT:
An antireflective layer formed from boron-doped amorphous carbon can be removed using a process which is less likely to over etch a dielectric layer than conventional technology. This layer can be removed by exposing the layer to an oxygen plasma (i.e. an “ashing” process), preferably concurrently with the ashing and removal of an overlying photoresist layer. An inventive process which uses the inventive antireflective layer is also described.

REFERENCES:
patent: 4675265 (1987-06-01), Kazama et al.
patent: 6333255 (2001-12-01), Sekiguchi
patent: 6469425 (2002-10-01), Sakai et al.
patent: 6750127 (2004-06-01), Chang et al.
patent: 2002/0088707 (2002-07-01), Towle
Copending Application: “Boron-Doped Amorphous Carbon Film For Use as a Hard Etch Mask During the Formation of a Semiconductor Device”, U.S. Appl. No. 10/463,185, filed Jun. 17, 2003.

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