Antireflection coating for highly reflective photolithographic l

Details Antireflection coating for highly reflective photolithographic l Antireflection coating for highly reflective photolithographic l

1995-11-28

1997-09-30

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

430313, 430317, 430950, 216 41, 216 49, H01L 213105

Patent

active

056722435

ABSTRACT:
An antireflection coating (116) for use in fabricating integrated circuits and electronic devices comprises a film of chromium oxide, CrO, or chromium suboxide, CrO.sub.x where x<1. An antireflection layer reduces the standing waves and topographic notching in a photoresist layer (118) when applied over a highly reflective layer (114). Highly reflective layers may be metals, such as aluminum or gold, silicides, or semiconductors, such as silicon. These coatings are preferably made by reactive sputtering of a chromium target with a partial pressure of oxygen in the sputtering chamber. The antireflection layer works primarily by absorptive, rather than wave matching, principles. This antireflection layer exhibits good adhesion and may be integrated into the device. Integrating the layer into the device may reduce stress in the underlying layers and improve device yields and reliability.

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H.A.M. van den Berg and J.B. van Staden, "Antireflection Coatings on Metal Layers for Photolithographic Purposes," J.Appl.Phys.50(3), 1212-1214, Mar. 1979.

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